AOK53S60 600v 53a general description product summary v ds @ t j,max 700v i dm 215a r ds(on),max 0.07 ? q g,typ 59nc e oss @ 400v 15 j 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOK53S60l symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt t j , t stg t l symbol r ja r cs r jc c/w w/ o c c thermal characteristics c/w maximum junction-to-case 0.24 AOK53S60 40 0.5 avalanche current c t c =25c gate-source voltage 300 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j -55 to 150 1688 100 20 520 c junction and storage temperature range maximum case-to-sink a maximum junction-to-ambient a,d c/w units parameter the AOK53S60 has been fabricated using the advanced mos tm high voltage process that is designed to deliver high levels of performance and robustness in switching applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 600 AOK53S60 v a 215 t c =100c pulsed drain current c continuous drain current t c =25c 30 single pulsed avalanche energy g w 45 p d repetitive avalanche energy c mj mj derate above 25 o c power dissipation b 4.2 dv/dt 53 33 a 9.5 i d v/ns g d s g s d top view to247 AOK53S60 rev0: sep 2012 www.aosmd.com page 1 of 6
AOK53S60 symbol min typ max units 600 -- 650 700 - --1 -10- i gss gate-body leakage current - - 100 n v gs(th) gate threshold voltage 2.5 3.2 3.8 v - 0.058 0.07 ? - 0.155 0.185 ? v sd - 0.84 - v i s maximum body-diode continuous current - - 53 a i sm - - 215 a c iss - 3034 - pf c oss - 222 - pf c o(er) - 170 - pf c o(tr) - 524 - pf c rss -3-pf r g - 1.8 - ? q g -59-nc q gs -17-nc q gd -19-nc t d(on) -48-ns t r - 102 - ns t d(off) - 215 - ns t f - 122 - ns t rr - 664 -ns i rm -36 -a q rr -14 - c this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. vgs=0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250a, v gs =0v, t j =150c effective output capacitance, energy related h vgs=0v, v ds =0 to 480v, f=1mhz switching parameters i dss effective output capacitance, time related i r ds(on) static drain-source on-resistance i s =26.5a,v gs =0v, t j =25c diode forward voltage input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance i f =26.5a,di/dt=100a/ s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =26.5a, r g =25 ? turn-off fall time total gate charge v gs =10v, v ds =480v, i d =26.5a gate source charge gate drain charge v gs =10v, i d =26.5a, t j =25c v ds =480v, t j =150c zero gate voltage drain current body diode reverse recovery charge i f =26.5a,di/dt=100a/ s,v ds =400v maximum body-diode pulsed current turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time peak reverse recovery current i f =26.5a,di/dt=100a/ s,v ds =400v v v gs =10v, i d =26.5a, t j =150c drain-source breakdown voltage i d =250a, v gs =0v, t j =25c a v ds =0v, v gs =30v v ds =600v, v gs =0v v ds =5v,i d =250 a a. the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedance from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. l=60mh, i as =7.5a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. rev0: sep 2012 www.aosmd.com page 2 of 6
AOK53S60 typical electrical and thermal characteristic s 0 20 40 60 80 100 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 6.5v 0.01 0.1 1 10 100 1000 0246810 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.02 0.04 0.06 0.08 0.10 0.12 0 20 40 60 80 100 120 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =26.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 20 40 60 80 100 0 5 10 15 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 6.5v rev0: sep 2012 www.aosmd.com page 3 of 6
AOK53S60 typical electrical and thermal characteristic s 0 3 6 9 12 15 0 20406080100 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =26.5a 1 10 100 1000 10000 100000 0 100 200 300 400 500 600 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1000 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area for AOK53S60 (note f) 10 s 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 v ds (volts) figure 10: coss stroed energy eoss(uj) e oss rev0: sep 2012 www.aosmd.com page 4 of 6
AOK53S60 typical electrical and thermal characteristic s 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 300 600 900 1200 1500 1800 25 50 75 100 125 150 175 t case (c) figure 12: avalanche energy e as (mj) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 14: normalized maximum transient thermal impedance for AOK53S60 (note f) z jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.24c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: sep 2012 www.aosmd.com page 5 of 6
AOK53S60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d( on) t on t d(of f ) t f t of f vdd vgs id vgs rg du t - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds is d is d diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev0: sep 2012 www.aosmd.com page 6 of 6
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